Published October 2005 | Version v1
Journal article

Structural defects in Cd1-xZnxAs2 solid solutions

  • 1. Moskovskij Gosudarstvennyj Univ. im. M.V. Lomonosova, Moscow (Russian Federation)
  • 2. RAN, Inst. Obshchej i Neorganicheskoj Khimii im. N. S. Kurnakova, Moscow (Russian Federation)

Description

The impurity photoconductivity spectra of undoped Cd1-xZnxAs2 single crystals with x = 0.03, 0.05, 0.06 are measured in the range 85-300 K. The results are used to determine the ionization energies of donor and acceptor levels produced in the crystals by structural defects: ε(1-3)d ∼ 0.019, 0.26, and 0.42 eV; ε(1-2)a = 0.24 and 0.34 eV, respectively. The nature of the structural defects responsible for these levels is discussed

Abstract (Russian)

Исследованы спектры примесной фотопроводимости нелегированных монокристаллов Cd1-xZnxAs2 с х = 0.03, 0.05, 0.06 в интервале температур 85-300 К. Определены энергии ионизации донорных и акцепторных уровней, создаваемых в материале структурными дефектами: ε(1-3)d ∼ 0.019, 0.26, 0.42 эВ; ε(1-2)a = 0.24, 0.34 эВ соответственно. Предложена модель формирования структурных дефектов в твердых растворах Cd1-xZnxAs2

Additional details

Additional titles

Original title (Russian)
Структурные дефекты в твердых растворах Cд

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
41
Journal Issue
10
Journal Page Range
p. 1182-1185
ISSN
0002-337X
CODEN
NEOMB8

Optional Information

Notes
9 refs., 2 figs.