Proton irradiation effects in silicon junction diodes and charge-coupled-devices

Proton irradiation effects in silicon devices are studied, for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5 x 109 - 5 x 1011 cm-2. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled-Devices fabricated in a 1.2 μm CCD-CMOS technology are shown to be quite resistant to 59 MeV H+ irradiations, irrespective of the substrate type. (author)