Ion beam implantation into diamond

Germanium and krypton ions were implanted with doses of 5x1016 cm-2 into natural diamond. The sample temperature was varied between liquid nitrogen and 700 deg C. The implantation current density was held at 1 μA/cm2 throughout the experiment. Four-point probe measurements were used to determine sheet resistance after implantation. The results show that the sheet resistance is dependent on the temperature during implantation and the ion dose. When the implantation dose was higher than 2x1016cm-2, the sheet resistance of natural diamond was saturated. The sheet resistance of samples decreased after annealing at 700 deg C for 1 hour in flowing forming gas. For comparison purposes, ion beam implantation was also carried out on polycrystalline diamond thin film obtained by the filament-assisted chemical vapor deposition (CVD). The similar results have been achieved. (author). 6 refs.; 5 figs.; 2 tabs