Published 1979 | Version v1
Book Metadata-only

A review of new developments on defects in germanium

Creators

  • 1. Osaka Univ., Toyonaka (Japan). Dept. of Physics

Description

Some new developments in the study of germanium since the Dubrovnik conference are reviewed. The review covers the theoretical treatment of the kinetics of the annealing of externally stimulated interstitials, the experimental study of quenched-in defects, the 6 to 14 K annealing stage in electron-irradiated germanium and the study of the substitution of impurity atoms by self-interstitials in thermal-neutron-irradiated germanium. (author)

Additional details

Publishing Information

Publisher
Institute of Physics.
Imprint Place
Bristol
ISBN
0 85498 137 3
Imprint Title
Defects and radiation effects in semiconductors, 1978
Journal Issue
no. 46
Series
Institute of Physics Conference Series.
Journal Page Range
p. 45-55.

Conference

Title
International conference on defects and radiation effects in semiconductors.
Dates
11 - 14 Sep 1978.
Place
Nice, France.

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
10494162
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; BIBLIOGRAPHIES; ELECTRONS; GERMANIUM; IMPURITIES; INTERSTITIALS; KINETICS; PHYSICAL RADIATION EFFECTS; QUENCHING; REVIEWS; THERMAL NEUTRONS
Descriptors DEC
BARYONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DOCUMENT TYPES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; HEAT TREATMENTS; LEPTONS; METALS; NEUTRONS; NUCLEONS; POINT DEFECTS; RADIATION EFFECTS