Published May 1999
| Version v1
Journal article
Migration and coalescence of Xe nanoprecipitates in Al induced by electron irradiation at 300 K
- 1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- 2. Joule Physics Laboratory, University of Salford, Manchester M5 4WT (United Kingdom)
- 3. High Resolution Beam Laboratories, National Research Institute for Metals, 3-13 Sakura, Tsukuba 305 (Japan)
Description
Effects of 1 MeV electron irradiation on Xe precipitates in Al, formed by ion implantation, have been observed in situ by high-voltage transmission electron microscopy. Individual Xe precipitates undergo melting and recrystallization, migration which leads to coalescence, and shape changes. These processes are driven by the production of defects without either cascade defect production or the introduction of additional Xe atoms. Precipitate migration is due to an irradiation-induced surface diffusion process on the Xe/Al interfaces. Coalescence of close precipitates is enhanced by directed motion as a result of the net displacement of Al atoms out of the volume between them. copyright 1999 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 74
- Journal Issue
- 18
- Journal Page Range
- p. 2611-2613
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30037870
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; BUBBLES; COALESCENCE; DIFFUSION; ELECTRON BEAMS; ION IMPLANTATION; PRECIPITATION; RADIATION EFFECTS; RECRYSTALLIZATION; TRANSMISSION ELECTRON MICROSCOPY; XENON
- Descriptors DEC
- BEAMS; ELECTRON MICROSCOPY; ELEMENTS; LEPTON BEAMS; METALS; MICROSCOPY; NONMETALS; PARTICLE BEAMS; RARE GASES; SEPARATION PROCESSES