Electron and gamma-ray irradiated NTD Si p-n structures static and dynamic parameters trade-off

The comparison of different radiation defects types influence on static and dynamic parameters trade-off of power diodes fabricated on neutron-transmutation doped silicon have been fulfilled. Various defects sets were introduced utilizing electron irradiation (E=6 MeV), gamma-ray Co 60 irradiation and electron irradiation and subsequent annealing at temperature 700 degrees centigrade. It is established that optimal trade-of between forward voltage drop and operation speed is achieved in case of electron irradiation and annealing. In this case recombination process is governed by defect with energy level near middle of forbidden gap (Ec-0.53 eV). The results obtained indicate on possibility of using these defect recombination properties for speed control in production of power fast high-voltage devices on the base of neutron-transmutation doped silicon. (authors)