Published May 2004
| Version v1
Journal article
Spin-polarized electronic transport in a spin-valve based on a quantum dot
Creators
Description
Electronic transport through a single-level quantum dot coupled to two ferromagnetic leads is studied in the sequential tunneling regime. Transport characteristics are calculated for arbitrary angle between magnetic moments of the electrodes. It is found that the diode feature in the transport characteristics is significantly suppressed for canted magnetic configurations. It is also shown that a small contribution from tunneling processes with simultaneous reversal of electron spin can enhance the TMR effect
Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2003.12.1189;
- PII
- S0304885303026817;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 272-276
- Journal Issue
- 6
- Journal Page Range
- p. 1933-1935
- ISSN
- 0304-8853
- CODEN
- JMMMDC
Conference
- Title
- International conference on magnetism
- Acronym
- ICM 2003
- Dates
- 27 Jul - 1 Aug 2003
- Place
- Rome (Italy)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36025285
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGED-PARTICLE TRANSPORT; ELECTRODES; ELECTRONS; MAGNETIC MOMENTS; MAGNETORESISTANCE; QUANTUM DOTS; SPIN; TUNNEL EFFECT
- Descriptors DEC
- ANGULAR MOMENTUM; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; NANOSTRUCTURES; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; RADIATION TRANSPORT
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.