Published May 2004 | Version v1
Journal article

Spin-polarized electronic transport in a spin-valve based on a quantum dot

Description

Electronic transport through a single-level quantum dot coupled to two ferromagnetic leads is studied in the sequential tunneling regime. Transport characteristics are calculated for arbitrary angle between magnetic moments of the electrodes. It is found that the diode feature in the transport characteristics is significantly suppressed for canted magnetic configurations. It is also shown that a small contribution from tunneling processes with simultaneous reversal of electron spin can enhance the TMR effect

Additional details

Identifiers

DOI
10.1016/j.jmmm.2003.12.1189;
PII
S0304885303026817;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
272-276
Journal Issue
6
Journal Page Range
p. 1933-1935
ISSN
0304-8853
CODEN
JMMMDC

Conference

Title
International conference on magnetism
Acronym
ICM 2003
Dates
27 Jul - 1 Aug 2003
Place
Rome (Italy)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36025285
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHARGED-PARTICLE TRANSPORT; ELECTRODES; ELECTRONS; MAGNETIC MOMENTS; MAGNETORESISTANCE; QUANTUM DOTS; SPIN; TUNNEL EFFECT
Descriptors DEC
ANGULAR MOMENTUM; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; NANOSTRUCTURES; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; RADIATION TRANSPORT

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.