Wannier-stark effect in Ge/Si quantum dot superlattices
- 1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- 2. Max-Planck-Institut für Mikrostrukturphysik (Germany)
Description
Deep level transient spectroscopy (DLTS) measurements were performed to study electron emission from quantum states in a 20-layer Ge quantum-dot superlattice (QDSL) in a Ge/Si p-n heterostructure. It was established that the changes in the DLTS spectra depend heavily on the magnitude of the applied reverse bias Ur. Three regions of the reverse bias Ur were identified, corresponding to the manifestation of the three modes of the Wannier-Stark effect: Wannier-Stark ladder mode, Wannier-Stark localization, and nonresonant Zener tunneling mode. Furthermore, it was found that the appearance of DLTS peaks for all three modes is associated with electron emission from deep-level defects via Wannier-Stark localized states arising as a result of the splitting of the electron miniband of the Ge/Si QDSL.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 42
- Journal Issue
- 3
- Journal Page Range
- p. 305-309
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43095017
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRON EMISSION; ELECTRONS; LAYERS; PEAKS; QUANTUM DOTS; QUANTUM STATES; SPECTRA; STARK EFFECT; SUPERLATTICES; TUNNEL EFFECT
- Descriptors DEC
- ELEMENTARY PARTICLES; EMISSION; FERMIONS; LEPTONS; NANOSTRUCTURES; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2008 Pleiades Publishing, Ltd.