Published March 2008 | Version v1
Journal article

Wannier-stark effect in Ge/Si quantum dot superlattices

  • 1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
  • 2. Max-Planck-Institut für Mikrostrukturphysik (Germany)

Description

Deep level transient spectroscopy (DLTS) measurements were performed to study electron emission from quantum states in a 20-layer Ge quantum-dot superlattice (QDSL) in a Ge/Si p-n heterostructure. It was established that the changes in the DLTS spectra depend heavily on the magnitude of the applied reverse bias Ur. Three regions of the reverse bias Ur were identified, corresponding to the manifestation of the three modes of the Wannier-Stark effect: Wannier-Stark ladder mode, Wannier-Stark localization, and nonresonant Zener tunneling mode. Furthermore, it was found that the appearance of DLTS peaks for all three modes is associated with electron emission from deep-level defects via Wannier-Stark localized states arising as a result of the splitting of the electron miniband of the Ge/Si QDSL.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
42
Journal Issue
3
Journal Page Range
p. 305-309
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43095017
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRON EMISSION; ELECTRONS; LAYERS; PEAKS; QUANTUM DOTS; QUANTUM STATES; SPECTRA; STARK EFFECT; SUPERLATTICES; TUNNEL EFFECT
Descriptors DEC
ELEMENTARY PARTICLES; EMISSION; FERMIONS; LEPTONS; NANOSTRUCTURES; SPECTROSCOPY

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Copyright
Copyright (c) 2008 Pleiades Publishing, Ltd.