Correlation of Hall and Shubnikov-de Haas Oscillations and Impurity States in Sn- and I- Doped Single Crystals p-Bi2Te3
Creators
- 1. Department of Physics, State University of New York at Brockport, Brockport, NY 14420 (United States)
- 2. ZAO NevInPat, per. Pirogova 7, St.-Petersburg 190000 (Russian Federation)
- 3. State Politechnical University, Politechnicheskaya ul. 29, St.-Petersburg 195251 (Russian Federation)
Description
Oscillations of the Hall coefficient and Shubnikov-de Haas (SdH) were observed in p-Bi2Te3 crystals doped with Sn (acceptor) and with I (donor) in magnetic fields up to 9 T parallel to the C3 trigonal axis at low temperatures (2 K < T < 20K), which is an evidence of the spatial homogeneity of carriers in complex solid solutions. This supports the existence of a narrow band of Sn states (partially filled) against the background of the valence band acting as a reservoir with high density of states partially filled with electrons. Previously, in these systems in which the Fermi level was in the light-hole valence band, both large Hall and SdH oscillations were observed, with ∼π phase shift between them, whereas when the Fermi level was in the heavy-hole valence band (larger acceptor content), no quantum oscillations were observed. It was concluded that the observed low amplitude quantum oscillations may be attributed to the shifting of the reservoir from the light-hole band to the heavy-hole, and the observed phase shift in the range 0 - π/2 between Hall and SdH oscillations may be attributed to filling factor of the reservoir with electrons, which varies with I content. Experimental results along with theoretical explanation of these correlations are presented. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/969/1/012020Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 969
- Journal Issue
- 1
- Journal Page Range
- [6 p.]
- ISSN
- 1742-6596
Conference
- Title
- 28. International Conference on Low Temperature Physics
- Acronym
- LT28
- Dates
- 9-16 Aug 2017
- Place
- Gothenburg (Sweden)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52080266
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- BISMUTH TELLURIDES; DENSITY OF STATES; DOPED MATERIALS; ELECTRONS; EXPERIMENT RESULTS; FERMI LEVEL; HOLES; IMPURITIES; IODINE; MAGNETIC FIELDS; MONOCRYSTALS; OSCILLATIONS; PHASE SHIFT; TEMPERATURE RANGE 0013-0065 K; THEORETICAL DATA; TIN; VALENCE; VISIBLE RADIATION
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; CRYSTALS; DATA; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY LEVELS; FERMIONS; HALOGENS; INFORMATION; LEPTONS; MATERIALS; METALS; NONMETALS; NUMERICAL DATA; RADIATIONS; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE