Published December 1994 | Version v1
Journal article

Co60 gamma ray and electron displacement damage studies of semiconductors

  • 1. Naval Research Lab., Washington, DC (United States)
  • 2. Univ. of Maryland, Baltimore, MD (United States). Dept. of Physics
  • 3. Spire Corp., Bedford, MA (United States)
  • 4. SFA Inc., Landover, MD (United States)

Description

A general method for relating Co60 gamma ray and monoenergetic electron beam displacement damage is presented. The approach is based on concept of effective ''displacement damage dose'', which is analogous to ideas used to study ionizing radiation effects. The response to electron damage of p-type gallium arsenide and indium phosphide solar cells, as previously reported for p-type silicon solar cells, is proportional to the square of the nonionizing energy loss

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
41
Journal Issue
6Pt1
Journal Page Range
p. 1945-1949.
ISSN
0018-9499
CODEN
IETNAE

Conference

Title
31. annual international nuclear and space radiation effects conference.
Dates
18-22 Jul 1994.
Place
Tucson, AZ (United States).

Optional Information

Secondary number(s)
CONF-940726--.