Published February 1, 2003 | Version v1
Journal article

Sputtering effects in a helicon plasma with an additional immersed antenna

  • 1. Plasma Research Laboratory, Research School of Physical Science and Engineering, Australian National University, ACT (Australia)
  • 2. Physics Department, University of Tromso, N-9037 Tromso (Norway)

Description

A plasma source excited by a double saddle helicon antenna outside the glass vacuum vessel has been modified by inserting a second copper antenna in contact with the plasma through the glass end plate. Both have the same frequency of 13.56 MHz but have a different phase. The immersed antenna is electrically floating, allowing a negative self-bias to form, leading to ion bombardment and sputtering of the copper onto the inner walls of the source tube. Dramatic changes in all plasma parameters (plasma density and potential, electron temperature, self-bias) are measured as the copper film increases in thickness, effectively shielding the power coupling of the helicon antenna. For low helicon powers the density decreases with time, but for high powers a copper free path is left in the glass adjacent to the helicon antenna due to re-sputtering of the deposited copper and no change in the plasma density is observed. This opens the possibility of having a 'negative' helicon antenna made of a copper cylinder with the antenna being the 'cut out' portion, opposite to the normal construction of helicon systems

Availability note (English)

Available online at http://stacks.iop.org/0963-0252/12/85/ps3111.pdf or at the Web site for the journal Plasma Sources Science and Technology (ISSN 1361-6595) http://www.iop.org/

Additional details

Identifiers

Publishing Information

Journal Title
Plasma Sources Science and Technology
Journal Volume
12
Journal Issue
1
Journal Page Range
p. 85-88
ISSN
0963-0252

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
34023144
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Descriptors DEI
ANTENNAS; COPPER; ELECTRON TEMPERATURE; PLASMA; PLASMA DENSITY; PLASMA POTENTIAL; SPUTTERING
Descriptors DEC
ELECTRIC POTENTIAL; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; METALS; TRANSITION ELEMENTS