Published March 1971 | Version v1
Journal article Metadata-only

Photoluminescence in GaAs irradiated with electrons at 77 deg K

Creators

  • 1. Osaka Univ., Suita (Japan). Faculty of Engineering

Description

no abstract available

Additional details

Publishing Information

Journal Title
Technol. Rep. Osaka Univ.
Journal Volume
21
Journal Issue
973-994
Series
Technol. Rep. Osaka Univ.
Journal Page Range
55-67

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
4036529
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; ARSENIDES; CRYSTAL DOPING; DOPED MATERIALS; ELECTRON BEAMS; EMISSION SPECTRA; GALLIUM COMPOUNDS; IRRADIATION; LOW TEMPERATURE; MEV RANGE 01-10; N-TYPE CONDUCTORS; PHOTOLUMINESCENCE; RADIATION EFFECTS; SILICON; TELLURIUM; TEMPERATURE DEPENDENCE
Descriptors DEC
BEAMS; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; LEPTON BEAMS; LUMINESCENCE; MEV RANGE; PARTICLE BEAMS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTRA