Kinetic analysis of interstitial atomic hydrogen in a-Si:(H,O,N) and beryllia

A method for interpreting thermal decay of interstitial atomic hydrogen Hoi produced by irradiation in a-Si: (H,O,N) and in beryllia was developed. The hypothesis of Hoi were produced from RH type molecules by irradiation effect and trapped in the interstitials of studied elements was considered. The hypothesis of the heating causes the disarming of Hoi, and can be retrapped, recombine with R matrices or react between themselves to form the H2 molecules. The kinetic equations were arranged by a schematic method for each proposed reaction. These equations were solved numerically by RungeKutta method. The adjust parameters show that the Hoi + Hoi -> H2 occurs only for beryllia, because the kinetic occurs at higher temperatures. All the parameters were adjusted to Arrhenius law, allowing to determine the activation energies for each process. (M.C.K.)