Temperature-dependent electrical transport characteristics of p-SnS/n-WO₃:Sb heterojunction diode

The p-SnS/n-WO₃:Sb heterojunction diode was successfully obtained by thermal evaporating SnS thin films on WO₃ doped with 2.0 mol% Sb₂O₃ of 1 mm thick ceramic pellet substrate. The electrical properties of p-SnS/n-WO₃:Sb heterojunction were investigated by forward current–voltage–temperature (I–V–T) characteristics in the temperature range of 20-300 K. It was found that at low forward bias voltage (<0.25V), the conduction mechanism of the diode exhibits Ohmic conduction. At intermediate voltage (0.253:Sb. The temperature dependence of the saturation current and ideality factor are well described by tunneling enhanced recombination model occurring at junction interface with E_a and E₀₀ values about 1.565 eV and 99.5 meV, respectively. (paper)