Controlled structures in laterally patterned barrier discharges by illumination of the semiconductor electrode

In this contribution, we present a possibility to actively control emerging patterns in laterally extended barrier discharges. One of the barriers is a high-ohmic semiconductive GaAs electrode. As the electrode is illuminated from its plasma-far side, the voltage inside the plasma gap is increased. If the gap voltage becomes higher than the ignition voltage of the gas, a discharge is started. A corresponding electrical model is given. The lateral resolution of control for a laterally homogeneous discharge is investigated. It is found that the luminescence of the discharge is controlled by both a variation of illumination power density and a variation of the applied voltage. However, during an increase in the applied voltage, the discharge may become larger than the area of illumination. Further, an investigation of the patterned discharge control shows that the number of current spots depends on the illumination power density and the area of illumination. The behaviour of current spot appearance suggests an inhibitory influence, preventing a discharge in its immediate surrounding and limiting the total number of current spots. (paper)