Published June 1996
| Version v1
Journal article
A study involving the design and fabrication process on the SRAM behavior during a dose-rate event
- 1. Nucletudes S.A., Les Ulis (France)
- 2. LRBA, Vernon (France)
- 3. Univ. Montpellier II (France). Centre Electronique de Montpellier
Description
The experimental results analysis of TS4T1601 SRAMs in standby mode and electrical simulations show that the SRAM design and some slight mask misalignments during the fabrication process are dominant factors concerning the dose-rate upset patterns and thresholds
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 43
- Journal Issue
- 3Pt1
- Journal Page Range
- p. 851-857.
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- 3. European symposium on radiations and their effects on components and systems.
- Dates
- 18-22 Sep 1995.
- Place
- Arcachon (France).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27075926
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DATA ANALYSIS; ERRORS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR STORAGE DEVICES; X RADIATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; MEMORY DEVICES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES
Optional Information
- Secondary number(s)
- CONF-9509107--.