Published August 31, 2013 | Version v1
Journal article

Analysis of light propagation for a crossing of thin silicon wires using vertical tunnelling coupling with a thick optical channel waveguide

  • 1. A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)

Description

Using silicon photonic wires in a silicon-on-insulator structure as an example, we examine the problem of crossings of thin, high-index-contrast channel waveguides. To ensure high optical wave transmission efficiency at as low a level of parasitic scattering as possible, we propose using a structure with vertical coupling between a thin tapered silicon waveguide and a thick polymer waveguide, separated by a thin buffer oxide layer. Numerical simulation is used to find conditions under which such a structure (3 × 90 μm in dimensions) ensures 98 % and 99 % transmission efficiency at ∼1.55 μm in 35- and 26-nm spectral ranges, respectively, for direct propagation and 99.99 % transmission in the transverse direction. The optical element in question is proposed for use in optical microchips with multiple channel waveguide crossings. (integrated optical waveguides)

Availability note (English)

Available from http://dx.doi.org/10.1070/QE2013v043n08ABEH015089

Additional details

Publishing Information

Journal Title
Quantum Electronics (Woodbury, N.Y.)
Journal Volume
43
Journal Issue
8
Journal Page Range
p. 744-750
ISSN
1063-7818

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46009561
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S72: PHYSICS OF ELEMENTARY PARTICLES AND FIELDS;
Descriptors DEI
COMPUTERIZED SIMULATION; EFFICIENCY; LIGHT TRANSMISSION; POLYMERS; SILICON; TUNNEL EFFECT; WAVEGUIDES
Descriptors DEC
ELEMENTS; SEMIMETALS; SIMULATION; TRANSMISSION