Band alignment of III-N, ZnO and II–IV-N₂ semiconductors from the electron affinity rule

The natural band alignment between various II–IV-N₂ and III-N and ZnO semiconductors are determined by means of first-principles surface calculations of their electron affinities. While these ignore specific interface dipole formation and strain effects, they provide a first guidance to the construction of heterojunction devices involving this family of materials. (paper)