Incorporation of electrolyte into anodic oxide film on tantalum

The in-depth analysis by IMA of anodic oxide films on tantalum formed in various electrolytes showed that sulfur, chlorine, fluorine and phosphorus were incorporated into the oxide films during the anodization. An influence of the forming current density on the incorporation depth of sulfur was investigated. The incorporation depth increased with an increase in the forming current density. The sulfur incorporation seemed to affect the sputtering rate of the films with Ar+ and the cathodic behavior of the film in 1M HClO4. (auth.)