Published April 1, 2006
| Version v1
Journal article
Simulation of the response of divacancy and As-V complex in silicon to external elastic strains
- 1. Helsinki University of Technology, P.O. Box 1100, 02015 Espoo (Finland)
- 2. RRC Kurchatov Institute, 123182 Moscow, Russia (RU)
- 3. Department of Physics, Physical Electronics, University of Oslo, P.O. Box 1048 Blindern, 0316 Oslo, Norway and Institute for Microsystem Technology, P.O. Box 2243, N-3103 Tonsberg (Norway)
Description
In this work we apply the plane wave ab initio code VASP for the estimation of the components of dipole tensors for the divacancy and the As-V pair, in silicon. Different charge states of defects are considered, and correlations of the defect dipole tensors and defect relaxation pattern with the defect charge are discussed
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2005.12.240;
- PII
- S0921-4526(05)01630-3;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 376-377
- Journal Page Range
- p. 966-970
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 23. international conference on defects in semiconductors
- Dates
- 24-29 Jul 2005
- Place
- Awaji Island (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37073288
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARSENIC; CHARGE STATES; COMPUTERIZED SIMULATION; CORRELATIONS; DIPOLES; RELAXATION; SILICON; STRAINS; TENSORS; V CODES; VACANCIES
- Descriptors DEC
- COMPUTER CODES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; MULTIPOLES; POINT DEFECTS; SEMIMETALS; SIMULATION
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.