Published November 2009 | Version v1
Journal article Metadata-only

Tunnelling transport in nonuniform barriers as a possible way for current control

Creators

  • 1. Institute for Physics of Microstructures, Russian Academy of Science, 603950 Nizhny Novgorod, GSP-105 (Russian Federation)

Description

This paper presents the results of computer simulation of the under barrier tunnelling transport through the nonuniform heterostructure barriers containing spherical or cylindrical nano objects. Embedding of nano objects in the barrier enables one to construct the semiconductor barriers with predefined properties. Application of external potential to these objects exponentially changes the current through the barrier and it can be used for current control and amplification of signals.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/193/1/012032

Additional details

Identifiers

DOI
10.1088/1742-6596/193/1/012032;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
193
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
16. international conference on electron dynamics in semiconductors, optoelectronics and nanostructures
Acronym
EDISON 16
Dates
24-28 Aug 2009
Place
Montpellier (France)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42029885
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMPLIFICATION; COMPUTERIZED SIMULATION; CONTROL; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; HETEROJUNCTIONS; NANOSTRUCTURES; POTENTIALS; SEMICONDUCTOR MATERIALS; SIGNALS; TUNNEL EFFECT
Descriptors DEC
CURRENTS; ELECTRICAL PROPERTIES; MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SIMULATION