Low temperature silicide formation of a Mo-Si system by ion implantation techniques

Molybdenum films deposited on Si substrates have been implanted with 130 keV Si ions to different doses at various substrate temperatures. The ion induced reaction in the Mo-Si structure has been investigated by Rutherford backscattering techniques. The logarithm plots of the thickness of the silicide layers formed as a function of reciprocal implant temperature can be fitted to an exponential function with an activation energy of 0.09 eV. The backscattering data also show that the thickness of the silicide layers increases with the square root of implant dose. It is revealed that the redistribution of As atoms previously implanted in Si substrate occurs during the ion-induced silicide formation even though the reaction proceeds at low temperatures, e.g., 4000C. (Auth.)