Tunability of spin Hall effect of light with semiconductor metamaterial based on magneto-optical effects
Creators
- 1. University of Electronic Science and Technology of China, School of Electronic Engineering (China)
- 2. Wuhan University of Technology, Department of Physics (China)
Description
In this paper, we have demonstrated a three-layer structure to explore the characteristics of spin Hall effect of light (SHEL). It is assumed that the structure is made of a semiconductor metamaterial which consists of and periodically and cladded with two different dielectrics, glass and . We investigated in detail how the spin Hall effect of reflected light at glass-semiconductor metamaterial is tuned after being exposed to an external magnetic field due to the magneto-optical effects. The Faraday and Voigt effects on the vertical and horizontal shifts of SHEL are calculated and discussed. The results show that magneto-optical effects have significantly enhanced or weakened the behavior of SHEL but the way of impact is different. This simple structure proposed in the paper can be used for yielding meaningful results for studying more complex systems related to SHEL.
Additional details
Identifiers
Publishing Information
- Journal Title
- Optical and Quantum Electronics
- Journal Volume
- 50
- Journal Issue
- 7
- Journal Page Range
- p. 1-8
- ISSN
- 0306-8919
- CODEN
- OQELDI
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51021440
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DIELECTRIC MATERIALS; GALLIUM ARSENIDES; GLASS; HALL EFFECT; MAGNETIC FIELDS; MAGNETO-OPTICAL EFFECTS; METAMATERIALS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SPIN; TITANIUM OXIDES; VISIBLE RADIATION
- Descriptors DEC
- ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PNICTIDES; RADIATIONS; SILICON COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2018 Springer Science+Business Media, LLC, part of Springer Nature
- Notes
- http://www.springer-ny.com