Published November 1, 1978
| Version v1
Journal article
Electroabsorption in GaTe
- 1. AN Azerbajdzhanskoj SSR, Baku
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi B
- Journal Volume
- 90
- Journal Issue
- 1
- Series
- Phys. Status Solidi B.
- Journal Page Range
- K77-K79
- ISSN
- 0370-1972
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 10462873
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ABSORPTION SPECTRA; DOPED MATERIALS; ELECTRIC FIELDS; GALLIUM TELLURIDES; LOW TEMPERATURE; MONOCRYSTALS; TEMPERATURE DEPENDENCE; TIN ADDITIONS
- Descriptors DEC
- CHALCOGENIDES; CRYSTALS; GALLIUM COMPOUNDS; SPECTRA; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- Short note.