A theoretical investigation of carrier and optical mode confinement in GaInNAs QWs on GaAs and InP substrates

Both carrier and optical mode confinements are the basic ingredients while designing the semiconductor quantum well lasers. The former strongly depends on the band offsets of the heterostructure and the latter is mainly associated with the difference in the refractive index between the wave guiding core and the cladding layers. It is known that refractive index strongly depends on the direct band gap of the semiconductor material and the band gap of the III-N-V semiconductor layer can be engineered by means of adding nitrogen into InGaAs. We investigate, in this work, the refractive indices and the corresponding optical confinement factors of the proposed III-N-V laser material systems on GaAs and InP substrates. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)