Published September 2010
| Version v1
Miscellaneous
Restricted
Electrical and photoelectrical properties of the isotype n-InSe/fullerite C60 and anisotype p-InSe/fullerite C60 heterojunctions
Creators
- 1. Moldova State Univ., 60 A. Mateevici Str., MD-2009, Chisinau (Moldova, Republic of)
Description
no abstract available
Files
Restricted
The record is publicly accessible, but files are restricted to users with access.
Additional details
Publishing Information
- Imprint Place
- Chisinau (Moldova, Republic of)
- Imprint Title
- 5. International conference on materials science and condensed matter physics and symposium 'Electrical methods of materials treatment'. Abstracts
- Imprint Pagination
- 340 p.
- Journal Page Range
- p. 231
- Report number
- INIS-MD--006
Conference
- Title
- 5. international conference on materials science and condensed matter physics; symposium on electrical methods of materials treatment
- Dates
- 13-17 Sep 2010
- Place
- Chisinau (Moldova, Republic of)
INIS
- Country of Publication
- Moldova, Republic of
- Country of Input or Organization
- Moldova, Republic of
- INIS RN
- 42081872
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- BRIDGMAN METHOD; CARBON; CHALCOGENIDES; CRYSTAL GROWTH; ELECTRICAL PROPERTIES; FULLERENES; HETEROJUNCTIONS; INDIUM COMPOUNDS; INDIUM SELENIDES; MONOCRYSTALS; PHOTOVOLTAIC EFFECT; PHYSICAL PROPERTIES; SELENIUM COMPOUNDS; THIN FILMS
- Descriptors DEC
- CARBON; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTALS; ELEMENTS; FILMS; INDIUM COMPOUNDS; NONMETALS; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- 3 refs.