Electron-positron momentum distributions associated with isolated silicon vacancies in 3C-SiC
Creators
- 1. Martin-Luther Universitaet, Halle-Wittenberg, FB Physik, Friedemann-Bach-Platz 6, D-06108, Halle (Germany)
- 2. Mizuho Information and Research Institute, 2-3, Kanda, Nishikicho, Chiyoda-ku, Tokyo 101-8843 (Japan)
- 3. National Institute for Materials Science, Namiki, 1-1, Tsukuba 305-0044 (Japan)
- 4. Takasaki Establishment, Japan Atomic Energy Research Institute, Watanuki, 1233, Takasaki, Gunma 370-1292 (Japan)
- 5. Advanced Science Research Center, Japan Atomic Energy Research Institute, Watanuki, 1233, Takasaki, Gunma 370-1292 (Japan)
Description
Two-dimensional angular correlation of annihilation radiation (2D-ACAR) and coincidence Doppler broadening (CDB) of annihilation radiation measurements have been performed on electron-irradiated n-type 3C-SiC in which isolated silicon vacancies are responsible for positron trapping. After irradiation, the intensity of the CDB spectrum increased and decreased in low- and high-momentum regions, respectively. These features were explained by a theoretical calculation considering silicon vacancies. The central region of the 2D-ACAR spectra became isotropic after irradiation, while the overall anisotropies extending within the Jones zone were conserved suggesting that isolated silicon vacancies have tetrahedral symmetry, as expected from a previous electron spin resonance study
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 72
- Journal Issue
- 4
- Journal Page Range
- p. 045204-045204.6
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37031425
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANGULAR CORRELATION; ANISOTROPY; ANNIHILATION; CRYSTALS; DISTRIBUTION; DOPPLER BROADENING; ELECTRON BEAMS; ELECTRON SPIN RESONANCE; ELECTRONS; EMISSION SPECTRA; IRRADIATION; POSITRONS; SEMICONDUCTOR MATERIALS; SILICON; SILICON COMPOUNDS; SYMMETRY; TRAPPING; VACANCIES; ZONES
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; BEAMS; CORRELATIONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; INTERACTIONS; LEPTON BEAMS; LEPTONS; LINE BROADENING; MAGNETIC RESONANCE; MATERIALS; MATTER; PARTICLE BEAMS; PARTICLE INTERACTIONS; POINT DEFECTS; RESONANCE; SEMIMETALS; SPECTRA
Optional Information
- Notes
- (c) 2005 The American Physical Society