Published January 1, 2018 | Version v1
Journal article

Properties of planar structures based on Policluster films of diamond and AlN

  • 1. Central Research Technological Institute "Technomash", Moscow (Russian Federation)
  • 2. Moscow Technological University (MIREA), Moscow (Russian Federation)
  • 3. Institute of Radio-engineering and Electronics of RAS, Moscow (Russian Federation)

Description

AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1757-899X/289/1/012041

Additional details

Publishing Information

Journal Title
IOP Conference Series. Materials Science and Engineering (Online)
Journal Volume
289
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1757-899X

Conference

Title
6. International Conference on Modern Technologies for Non-Destructive Testing
Dates
9-14 Oct 2017
Place
Tomsk (Russian Federation)