Published 1989
| Version v1
Book
Etching of vias in SiO2 with controllable sidewall angles
Creators
- 1. Arizona Univ., Tucson, AZ (USA)
- 2. Motorola, Inc., Phoenix, AZ (USA)
Description
A via through an insulating SIO2 (oxide) layer to an underlying material allows a metal contact to be made with that material. If the via is step covered with aluminum, the thickness of the aluminum should be uniform. For this reason, a via is etched so that it has sloped sidewalls of the approximately 450. Usually, the sidewall angle is controlled by shaping the photoresist mask. In this paper, the authors describe a technique in which the sidewall angle of the via is controlled by the components of the chemistry
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- Proceedings of the 1989 IEEE international conference on plasma science (Abstracts)
- Imprint Pagination
- 180 p.
- Journal Page Range
- p. 155.
Conference
- Title
- Institute of Electrical and Electronics Engineers international conference on plasma science.
- Dates
- 22-24 May 1989.
- Place
- Buffalo, NY (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21042561
- Subject category
- S36: MATERIALS SCIENCE; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; CERIUM FLUORIDES; CHEMICAL REACTION KINETICS; ETCHING; HELIUM; METHYL CHLORIDE; NEON; PHOTORESISTORS; SILICON OXIDES; THICKNESS
- Descriptors DEC
- CERIUM COMPOUNDS; CHALCOGENIDES; DIMENSIONS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; KINETICS; METALS; NONMETALS; ORGANIC CHLORINE COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC HALOGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; RARE EARTH COMPOUNDS; RARE GASES; REACTION KINETICS; RESISTORS; SILICON COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-8905184--.