Tetra-σ bonding adsorption of pyridine on Si(1 0 0)-2 x 1
- 1. Department of Physics, POSTECH, San 31, Hyojadong, Namgu, Pohang, Kyung-Buk 790-784 (Korea, Republic of)
- 2. Department of Chemistry and School of Molecular Science (BK21), Korea Advanced Institute of Science and Technology, 355 Gwahangno, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)
- 3. Pohang Accelerator Laboratory, San 31, Hyojadong, Namgu, Pohang, Kyung-Buk 790-784 (Korea, Republic of)
Description
We studied adsorption of pyridine on Si(1 0 0) at room temperature using high resolution photoemission spectroscopy (PES) and near edge X-ray adsorption fine structure (NEXAFS) in the partial electron yield (PEY) mode. The Si 2p, C 1s, N 1s spectra of pyridine on Si(1 0 0) showed that pyridine is chemisorbed on Si(1 0 0)-2 x 1 through the formation of the tetra-σ-bonded structure with the N atom and three C atoms. NEXAFS was conducted to characterize the adsorption geometry of pyridine on Si(1 0 0). The π* orbital of C=C bond showed a good angle dependence in C K-edge NEXAFS spectra, and we were able to estimate the adsorption angle between chemisorbed pyridine of C=C bond and the Si(1 0 0) surface using an analytical solution of NEXAFS intensity. We find the coexistence of two different tight bridges with the adsorption angles 42 ± 2 deg. and 45 ± 2 deg. with almost equal abundance
Availability note (English)
Available from http://dx.doi.org/10.1016/j.elspec.2008.05.005Additional details
Identifiers
- DOI
- 10.1016/j.elspec.2008.05.005;
- PII
- S0368-2048(08)00048-0;
Publishing Information
- Journal Title
- Journal of Electron Spectroscopy and Related Phenomena
- Journal Volume
- 164
- Journal Issue
- 1-3
- Journal Page Range
- p. 44-47
- ISSN
- 0368-2048
- CODEN
- JESRAW
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40046362
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; ABUNDANCE; ADSORPTION; ANALYTICAL SOLUTION; CARBON; CHEMISORPTION; FINE STRUCTURE; NITROGEN; ORGANIC SEMICONDUCTORS; PHOTOEMISSION; PYRIDINE; SILICON; TEMPERATURE RANGE 0273-0400 K; X-RAY SPECTROSCOPY
- Descriptors DEC
- AZINES; CHEMICAL REACTIONS; ELEMENTS; EMISSION; HETEROCYCLIC COMPOUNDS; MATERIALS; MATHEMATICAL SOLUTIONS; NONMETALS; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS; PYRIDINES; SECONDARY EMISSION; SEMICONDUCTOR MATERIALS; SEMIMETALS; SEPARATION PROCESSES; SORPTION; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.