Published August 1, 1996 | Version v1
Journal article

''Gate-to-gate'' BJT obtained from the double-gate input JFET to reset charge preamplifiers

  • 1. Politecnico di Milano (Italy). Dipartimento di Ingegneria Nucleare
  • 2. Brookhaven National Laboratory, Upton, NY 11973 (United States)

Description

A novel charge restoration mechanism to reset charge sensitive preamplifiers is presented. The ''gate-to-gate'' Bipolar Junction Transistor transversal to the input JFET with independent top and bottom gates is exploited as a ''reset transistor'' embodied in the preamplifier input device. The p-n junction between the bottom gate and the channel is forward-biased by a proper feedback loop supplying the necessary restoration current to the input node capacitance through the top gate-channel reversed-biased junction. The continuous reset mode is here analysed with reference to the DC stability, the pulse response and the noise behaviour. Experimental results are reported. (orig.)

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
377
Journal Issue
2-3
Journal Page Range
p. 453-458.
ISSN
0168-9002
CODEN
NIMAER

Conference

Title
7. European symposium on semiconductor detectors, new developments in radiation detectors.
Dates
7-10 May 1995.
Place
Schloss Elmau (Germany).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
27068845
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BACKGROUND NOISE; DIRECT CURRENT; FEEDBACK; FIELD EFFECT TRANSISTORS; JUNCTION TRANSISTORS; P-N JUNCTIONS; PREAMPLIFIERS; RESPONSE FUNCTIONS; STABILITY
Descriptors DEC
AMPLIFIERS; CURRENTS; ELECTRIC CURRENTS; ELECTRONIC EQUIPMENT; EQUIPMENT; FUNCTIONS; NOISE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS