Published August 1, 1996
| Version v1
Journal article
''Gate-to-gate'' BJT obtained from the double-gate input JFET to reset charge preamplifiers
Creators
- 1. Politecnico di Milano (Italy). Dipartimento di Ingegneria Nucleare
- 2. Brookhaven National Laboratory, Upton, NY 11973 (United States)
Description
A novel charge restoration mechanism to reset charge sensitive preamplifiers is presented. The ''gate-to-gate'' Bipolar Junction Transistor transversal to the input JFET with independent top and bottom gates is exploited as a ''reset transistor'' embodied in the preamplifier input device. The p-n junction between the bottom gate and the channel is forward-biased by a proper feedback loop supplying the necessary restoration current to the input node capacitance through the top gate-channel reversed-biased junction. The continuous reset mode is here analysed with reference to the DC stability, the pulse response and the noise behaviour. Experimental results are reported. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 377
- Journal Issue
- 2-3
- Journal Page Range
- p. 453-458.
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 7. European symposium on semiconductor detectors, new developments in radiation detectors.
- Dates
- 7-10 May 1995.
- Place
- Schloss Elmau (Germany).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 27068845
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BACKGROUND NOISE; DIRECT CURRENT; FEEDBACK; FIELD EFFECT TRANSISTORS; JUNCTION TRANSISTORS; P-N JUNCTIONS; PREAMPLIFIERS; RESPONSE FUNCTIONS; STABILITY
- Descriptors DEC
- AMPLIFIERS; CURRENTS; ELECTRIC CURRENTS; ELECTRONIC EQUIPMENT; EQUIPMENT; FUNCTIONS; NOISE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS