Published October 15, 1993
| Version v1
Journal article
A silicon pixel detector with integrated amplification devices
- 1. NCSR Demokritos, Athens (Greece). Inst. of Microelectronics
Description
A new pixel detector with amplification at pixel level is proposed. This detector is based on lightly doped pixels that serve not only as the cathode electrodes but also as wells for the fabrication of field effect transistors. A noise analysis is presented leading to the optimum amplifier design and revealing an excellent noise performance. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 335
- Journal Issue
- 1-2
- Journal Page Range
- p. 266-270.
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 25011188
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- BACKGROUND NOISE; CATHODES; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; JUNCTION TRANSISTORS; OPTIMIZATION; POSITION SENSITIVE DETECTORS; PREAMPLIFIERS; PULSE AMPLIFIERS; READOUT SYSTEMS; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- AMPLIFIERS; ELECTRODES; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; MEASURING INSTRUMENTS; NOISE; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; TRANSISTORS