Published November 2020 | Version v1
Journal article Metadata-only

Characterization of selectively oriented polycrystalline silicon thin films formed by multiline beam continuous-wave laser lateral crystallization with overlapping

Creators

  • 1. Hanoi National University of Education, Hanoi (Viet Nam)
  • 2. Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, Sayo, Hyogo (Japan)
  • 3. Institute of Materials Science, Vietnam Academy of Science and Technology, Hanoi (Viet Nam)
  • 4. Hiroshima University, Research Institute for Nanodevice and Bio Systems, Higashi-Hiroshima, Hiroshima (Japan)

Description

The uniformity of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) over a large scale is an important element in their application. Characteristics of poly-Si thin films are the key factors influencing the performance of TFTs. In this area, we developed void-free (100)-surface oriented poly-Si thin films over large areas using multiline beam continuous-wave laser lateral crystallization (MLB-CLC) with overlapping scanning. Predominantly (100)-surface oriented poly-Si thin films are formed over large areas with the laser power from 5 to 8 W. (100), and random, or (211)-surface orientations can be selected by varying the laser power and scanning speed. In addition, characterization of these selectively oriented poly-Si thin films is analyzed using two-dimensional X-ray diffraction and hard X-ray photoelectron spectroscopy. (author)

Availability note (English)

Available from DOI: https://doi.org/10.35848/1347-4065/abc1a9

Additional details

Identifiers

DOI
10.35848/1347-4065/abc1a9;

Publishing Information

Journal Title
Japanese Journal of Applied Physics (Online)
Journal Volume
59
Journal Issue
11
Journal Page Range
p. 115504.1-115504.6
ISSN
1347-4065

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
52090499
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S43: PARTICLE ACCELERATORS;
Descriptors DEI
AMORPHOUS STATE; CARRIER MOBILITY; CRYSTALLIZATION; ELECTRON DIFFRACTION; ELECTRON MOBILITY; IRRADIATION; LASER RADIATION; RAMAN SPECTRA; SCANNING ELECTRON MICROSCOPY; SILICON; THIN FILMS; TRANSISTORS; X-RAY DIFFRACTION
Descriptors DEC
COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; FILMS; MICROSCOPY; MOBILITY; PARTICLE MOBILITY; PHASE TRANSFORMATIONS; RADIATIONS; SCATTERING; SEMICONDUCTOR DEVICES; SEMIMETALS; SPECTRA

Optional Information

Notes
30 refs., 8 figs.