Ion beam sputtered aluminum based multilayer mirrors for extreme ultraviolet solar imaging
Creators
- 1. Centre National d'Etudes Spatiales (CNES), 18 Avenue E. Belin, 31401 Toulouse (France)
- 2. Laboratoire Charles Fabry, Institut d'Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France)
- 3. Institut d'Electronique et de Télécommunications de Rennes (IETR) UMR-CNRS 6164, Université de Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex France (France)
- 4. Institut des Sciences Moléculaires d'Orsay UMR 8214, Univ Paris Sud, 91405 Orsay France (France)
Description
In this paper, we report on the design, synthesis and characterization of extreme ultraviolet interferential mirrors for solar imaging applications in the spectral range 17 nm–34 nm. This research is carried out in the context of the preparation of the European Space Agency Solar Orbiter mission. The purpose of this study consists in optimizing the deposition of Al-based multilayers by ion beam sputtering according to several parameters such as the ion beam current and the sputtering angle. After optimization of Al thin films, several kinds of Al-based multilayer mirrors have been compared. We have deposited and characterized bi-material and also tri-material periodic multilayers: aluminum/molybdenum [Al/Mo], aluminum/molybdenum/boron carbide [Al/Mo/B4C] and aluminum/molybdenum/silicon carbide [Al/Mo/SiC]. Best experimental results have been obtained on Al/Mo/SiC samples: we have measured reflectivity up to 48% at 17.3 nm and 27.5% at 28.2 nm on a synchrotron radiation source. - Highlights: • Design and synthesis of extreme ultraviolet interferential mirrors. • Optimization of aluminum thin films by adjusting several deposition parameters. • Comparison of results obtained with different types of Al-based multilayer mirrors. • Reflectivity up to 48% at 17.3 nm on a synchrotron radiation source
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2013.12.015Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2013.12.015;
- PII
- S0040-6090(13)02061-0;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 552
- Journal Page Range
- p. 62-67
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46128699
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; BEAM CURRENTS; BORON CARBIDES; COMPARATIVE EVALUATIONS; ENERGY BEAM DEPOSITION; EXTREME ULTRAVIOLET RADIATION; ION BEAMS; LAYERS; MOLYBDENUM; REFLECTIVITY; SILICON CARBIDES; SPUTTERING; SYNTHESIS; THIN FILMS
- Descriptors DEC
- BEAMS; BORON COMPOUNDS; CARBIDES; CARBON COMPOUNDS; CURRENTS; DEPOSITION; ELECTROMAGNETIC RADIATION; ELEMENTS; EVALUATION; FILMS; METALS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATIONS; REFRACTORY METALS; SILICON COMPOUNDS; SURFACE COATING; SURFACE PROPERTIES; TRANSITION ELEMENTS; ULTRAVIOLET RADIATION
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.