Published 1989
| Version v1
Journal article
The EL2 defect and the isolated arsenic defect in GaAs
- 1. Ecole Normale Superieure, 75 - Paris (France)
- 2. Institut Superieur d'Electronique du Nord, Department de Physique des Solids, Lille (France)
Description
A comparison of the experimentally determined properties of the EL2 defect in GaAs such as its point symmetry, thermal stability, formation by electron irradiation and its role in the compensation mechanism in undoped GaAs with those predicted for the isolated arsenic antisite defect lead to the conclusion that EL2 must be a complex defect. (author) 19 refs
Additional details
Publishing Information
- Journal Title
- Materials Science Forum
- Journal Volume
- 38-41
- Series
- Mater. Sci. Forum.
- Journal Page Range
- 97-100
- ISSN
- 0255-5476
- CODEN
- MSFOE
Conference
- Title
- 15. International conference on defects in semiconductors (ICDS-15).
- Dates
- 22-26 Aug 1988.
- Place
- Budapest (Hungary).
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 20053759
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COMPLEXES; CRYSTAL DEFECTS; ELECTRONS; GALLIUM ARSENIDES; IRRADIATION; STABILITY; SYMMETRY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; LEPTONS