Published January 4, 2010
| Version v1
Journal article
Plasma waves induced by the optical beating in HEMT channels as an expected source of TeraHertz radiation generation
Creators
- 1. Semiconductor Physics Institute, Goshtauto 11, 01108 Vilnius (Lithuania)
- 2. Institut d'Electronique du Sud (CNRS UMR 5214), Universite Montpellier 2, Place Eugene Bataillon, 34095 Montpellier Cedex 5 (France)
Description
Results of hydrodynamic simulation of HEMT performance under photo-mixing excitation of free carriers in the conducting channel are presented. A resonant enhancement of current amplitudes at the beating frequency due to excitation of 2D plasma waves is demonstrated.
Additional details
Identifiers
- DOI
- 10.1063/1.3295373;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1199
- Journal Issue
- 1
- Journal Page Range
- p. 211-212
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 29. international conference on the physics of semiconductors
- Dates
- 27 Jul - 1 Aug 2008
- Place
- Rio de Janeiro (Brazil)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41101849
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMPLITUDES; CARRIER MOBILITY; COMPUTERIZED SIMULATION; ELECTRIC CONDUCTIVITY; EXCITATION; HYDRODYNAMICS; PERFORMANCE; PLASMA WAVES; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; THZ RANGE
- Descriptors DEC
- ELECTRICAL PROPERTIES; ENERGY-LEVEL TRANSITIONS; FLUID MECHANICS; FREQUENCY RANGE; MATERIALS; MECHANICS; MOBILITY; NANOSTRUCTURES; PHYSICAL PROPERTIES; SIMULATION
Optional Information
- Notes
- (c) 2009 American Institute of Physics