Published April 15, 1981
| Version v1
Journal article
Reflectance of silicon surfaces after high dose rate molecular ion implantation
- 1. Strasbourg-1 Univ., 67 (France). Groupe de Physique de Applications des Semiconducteurs
- 2. Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires
Description
Change of reflectivity in the UV to IR range has been measured on crystalline silicon implanted at very high dose rate by a glow discharge process of BF3 or PF5 accelerated to 10-50 kV. Partial regrowth of the damage by beam annealing is observed but an amorphous film always remains on the top surface. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods
- Journal Volume
- 182/183
- Journal Issue
- pt.2
- Series
- Nucl. Instrum. Methods.
- Journal Page Range
- 595-600
- ISSN
- 0029-554X
Conference
- Title
- 2. international conference on ion beam modification of materials.
- Dates
- 14 - 18 Jul 1980.
- Place
- Albany, NY, USA.
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 12630601
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ANNEALING; EXPERIMENTAL DATA; INFRARED SPECTRA; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; SILICON; SURFACES; ULTRAVIOLET SPECTRA
- Descriptors DEC
- DATA; ELEMENTS; HEAT TREATMENTS; INFORMATION; NUMERICAL DATA; RADIATION EFFECTS; SEMIMETALS; SPECTRA