Conductance fluctuations and quantum oscillation in topological insulator PbBi4Te7
- 1. Department of Pure and Applied Physics, Guru Ghasidas Vishwavidyalaya, Koni, Bilaspur (India)
- 2. National Changhua University of Education, Jin-De Road, Changhua 500 (China)
- 3. UGC-DAE CSR, University Campus, Khandwa Road, Indore 452001 (India)
- 4. Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)
Description
Topological insulators (TIs) are materials that behave as insulators in its interior and have conducting boundaries or edges. This unique characteristic of topological insulator was realized because of strong spin orbit coupling (SOC) of heavy elements. Here, we present the magnetotransport study of nano device made from mechanically exfoliated flake of PbBi4Te7 topological insulator single crystal. The temperature variation of Rxx, illustrated in this article, showing positive temperature coefficient of resistance above 15 K and bellow 15 K, it shows saturating nature, reflecting the bulk metallic signature. We present the observations of weak antilocalization and Shubinikov-de-Haas (SdH) oscillations accompanied by unique conductance fluctuations
Additional details
Publishing Information
- Publisher
- Indian Institute of Information Technology and Management
- Imprint Place
- Gwalior (India)
- Imprint Title
- Proceedings of the first international conference on advances in nanomaterials and devices for energy and environment: abstract proceeding
- Imprint Pagination
- [179 p.]
- Journal Page Range
- [2 p.]
Conference
- Title
- international conference on advances in nanomaterials and devices for energy and environment
- Acronym
- ICAN-2019
- Dates
- 27-29 Jan 2019
- Place
- Gwalior (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 52097276
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BISMUTH TELLURIDES; DIELECTRIC MATERIALS; ELECTRICAL INSULATION; ELECTRICAL INSULATORS; LEAD TELLURIDES; MAGNETIZATION; TOPOLOGY
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; ELECTRICAL EQUIPMENT; EQUIPMENT; LEAD COMPOUNDS; MATERIALS; MATHEMATICS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- Article ID OI-3