Published January 2004
| Version v1
Journal article
Vertical self-assembling of quantum dots in Si/Ge multilayered structures
Description
Stacks of six or eight bilayers of Ge/Si were grown by molecular beam epitaxy (MBE) on Si/Si0,5Ge0,5 buffer layers modified with in situ implantation of 1 keV As+ or Ge+ ions. The structures were investigated by transmission electron microscopy (TEM). Vertically correlated Ge islands are observed by TEM. Results from variation of pre-implantation, thickness of Ge layers and temperature of MBE growth are presented. (Author)
Additional details
Additional titles
- Original title (Russian)
- Вертикальная самоорганизация квантовых точек в многослойных структурах Си/Ге
Publishing Information
- Journal Title
- Vestsi Natsyyanal'naj Akadehmii Navuk Belarusi. Seryya Fizika-Matehmatychnykh Navuk
- Journal Volume
- 1
- Journal Page Range
- p. 110-113
- ISSN
- 1561-2430
INIS
- Country of Publication
- Belarus
- Country of Input or Organization
- Belarus
- INIS RN
- 35068480
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARSENIC IONS; GERMANIUM; GERMANIUM IONS; ION IMPLANTATION; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; ELEMENTS; EPITAXY; IONS; METALS; MICROSCOPY; NANOSTRUCTURES; SEMIMETALS
Optional Information
- Notes
- 13 refs., 3 figs.