Published May 2000
| Version v1
Journal article
Special features of the sublimational molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures
Creators
- 1. Physicotechnical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603600 (Russian Federation)
Description
The concentration of charge carriers and their Hall mobility in Si:Er/Si layers grown by sublimational molecular-beam epitaxy were investigated as functions of temperature in the range of 300-77 K. No electric activity of Er-containing luminescent centers was observed. The feasibility of precise control over impurity profiles in growing the p+-n-n+ electroluminescent structures is demonstrated
Additional details
Identifiers
- DOI
- 10.1134/1.1188015;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 34
- Journal Issue
- 5
- Journal Page Range
- p. 502-509
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35051881
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- CARRIER MOBILITY; CHARGE CARRIERS; ERBIUM; EXPERIMENTAL DATA; INTERFERING ELEMENTS; LAYERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- CRYSTAL GROWTH METHODS; DATA; ELEMENTS; EPITAXY; INFORMATION; MATERIALS; METALS; MOBILITY; NUMERICAL DATA; RARE EARTHS; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 34, 519-525 (No. 5, 2000); (c) 2000 MAIK ''Nauka / Interperiodica''.