Published May 2006 | Version v1
Journal article Metadata-only

The impact of unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFET: classical to full quantum simulation

Creators

  • 1. Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, G12 8LT, Scotland (United Kingdom)
  • 2. Nasa Ames Research Center, MS:229-1, Moffett Field, California 94035-1000 (United States)

Description

A comparison of full quantum device simulation with semi-classical methods is made for an unintended single atomistic dopant at various locations in a 10 nm double gate MOSFET transistor. The density gradient method comes closest to the non-equilibrium Green function results for fails seriously when the unwanted charge is located well-within the channel

Availability note (English)

Available online at http://stacks.iop.org/1742-6596/38/192/jpconf6_38_046.pdf or at the Web site for the Journal of Physics. Conference Series (Online) (ISSN 1742-6596) http://www.iop.org/

Additional details

Identifiers

URL
http://stacks.iop.org/1742-6596/38/192/jpconf6_38_046.pdf; http://www.iop.org/;
DOI
10.1088/1742-6596/38/1/046;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
38
Journal Issue
1
Journal Page Range
p. 192-195
ISSN
1742-6596

Conference

Title
7. international conference on new phenomena in mesoscopic structures; 5. international conference on surfaces and interfaces of mesoscopic devices
Dates
27 Nov - 2 Dec 2005
Place
Maui, HI (United States)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38028654
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; DENSITY; EQUILIBRIUM; GATING CIRCUITS; GREEN FUNCTION; MOSFET; QUANTUM MECHANICS; SEMICLASSICAL APPROXIMATION
Descriptors DEC
APPROXIMATIONS; CALCULATION METHODS; ELECTRONIC CIRCUITS; EVALUATION; FIELD EFFECT TRANSISTORS; FUNCTIONS; MECHANICS; MOS TRANSISTORS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SIMULATION; TRANSISTORS