Published June 16, 2003 | Version v1
Journal article Metadata-only

In1-xMnxSb--a narrow-gap ferromagnetic semiconductor

Creators

  • 1. Department of Physics, University at Buffalo, State University of New York, Buffalo, New York 14260 (United States)
  • 2. Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  • 3. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  • 4. Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland)

Description

A narrow-gap ferromagnetic In1-xMnxSb semiconductor alloy was grown by low-temperature molecular-beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In1-xMnxSb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures TC ranging up to 8.5 K. The observed values of TC agree well with the existing models of carrier-induced ferromagnetism

Additional details

Identifiers

DOI
10.1063/1.1583142;
arXiv
arXiv:cond-mat/0303212v1;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
82
Journal Issue
24
Journal Page Range
p. 4310-4312
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35048067
Subject category
S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ANTIMONY COMPOUNDS; CADMIUM TELLURIDES; CURIE POINT; FERROMAGNETIC MATERIALS; GADOLINIUM ARSENIDES; GRADED BAND GAPS; HALL EFFECT; HYSTERESIS; INDIUM COMPOUNDS; MAGNETIC PROPERTIES; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SUBSTRATES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; EPITAXY; GADOLINIUM COMPOUNDS; MAGNETIC MATERIALS; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES; RARE EARTH COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TRANSITION TEMPERATURE

Optional Information

Notes
(c) 2003 American Institute of Physics.