Effect of thermal treatment on the optical and the structural properties of In0.5Ga0.5As quantum dots
- 1. Korea Photonics Technology Institute, Gwangju (Korea, Republic of)
- 2. Korea Institute of Science and Technology, Seoul (Korea, Republic of)
- 3. Kyung Hee University, Yongin (Korea, Republic of)
Description
The optical and the structural properties of a 3-stacked In0.5Ga0.5As quantum dot (QD)/GaAs structure subjected to a post thermal annealing process have been investigated. Photoluminescence (PL) and time-resolved PL spectroscopy have been performed to examine the optical properties of the as-grown and thermally-treated QD structures. Thermal annealing of the QD structure at temperatures up to 700 .deg. C leads to enhancements of the PL intensity and the carrier decay time without any PL peak shifts. The increases in the PL intensity and the carrier lifetime can be attributed to a reduction in the number of crystal defects in the QDs and in the GaAs layer near the QDs. The structural properties of the In0.5Ga0.5As QDs/GaAs heterointerface have been further examined with a transmission electron microscope analysis.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 64
- Journal Issue
- 9
- Series
- 23 refs, 4 figs
- Journal Page Range
- p. 1375-1379
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 46042781
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- GALLIUM ARSENIDES; HEAT TREATMENTS; INDIUM COMPLEXES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHYSICAL PROPERTIES; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COMPLEXES; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MICROSCOPY; NANOSTRUCTURES; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES