Published December 4, 2013 | Version v1
Journal article Metadata-only

Relaxation and recombination processes in Ge/SiGe multiple quantum wells

Creators

  • 1. L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy)
  • 2. L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy)
  • 3. Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

Description

The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at Γ is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed

Additional details

Identifiers

DOI
10.1063/1.4848489;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1566
Journal Issue
1
Journal Page Range
p. 470-471
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
31. international conference on the physics of semiconductors
Acronym
ICPS 2012
Dates
29 Jul - 3 Aug 2012
Place
Zurich (Switzerland)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45083118
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTRONS; GERMANIUM SILICIDES; QUANTUM WELLS; RECOMBINATION; RELAXATION; SPECTROSCOPY
Descriptors DEC
ELEMENTARY PARTICLES; FERMIONS; GERMANIUM COMPOUNDS; LEPTONS; NANOSTRUCTURES; SILICIDES; SILICON COMPOUNDS

Optional Information

Notes
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