Evidence of interface-induced persistent photoconductivity in InP/In0.53Ga0.47As/InP double heterostructures grown by molecular-beam epitaxy
Creators
- 1. Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)
- 2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Description
The impact of interface switching sequences on interface quality and minority carrier recombination in In0.53Ga0.47As/InP double heterostructure (DH) grown by solid-source molecular-beam epitaxy (MBE) was studied. As2 exposure at the lower In0.53Ga0.47As/InP interface prior to In0.53Ga0.47As growth was found to cause enhanced As diffusion into the underlying InP that correlates with steadily increased photoconductive decay (PCD) lifetimes beyond the theoretical radiative and Auger limit. Low-temperature PCD measurements reveal that a persistent photoconductivity (PPC) process is responsible for the high 'apparent' lifetimes. The PPC effect increases monotonically with As2 exposure on the InP surface, implying the involvement of interfacial defects in the carrier recombination dynamics of In0.53Ga0.47As/InP DHs grown by MBE
Additional details
Identifiers
- DOI
- 10.1063/1.1994948;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 87
- Journal Issue
- 3
- Journal Page Range
- p. 032106-032106.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37017708
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL GROWTH; DIFFUSION; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; LIFETIME; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; RECOMBINATION; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- (c) 2005 American Institute of Physics