Published 1998
| Version v1
Miscellaneous
Thermally activated defect transformations in III-V compound semiconductors
Creators
- 1. Institute opf Electronic Materials Technology, Warsaw (Poland)
- 2. Institute of Nuclear Research, Warsaw (Poland)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION'98
- Imprint Pagination
- 171 p.
- Journal Page Range
- p. 23-24
Conference
- Title
- International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION'98
- Dates
- 16-19 Jun 1998
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31020261
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ANNEALING; ARSENIDES; CRYSTAL DEFECTS; EPITAXY; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; GALLIUM NITRIDES; MEETINGS; MONOCRYSTALS; RADIATION EFFECTS; RUTHERFORD SCATTERING; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; CRYSTALS; ELASTIC SCATTERING; GALLIUM COMPOUNDS; HEAT TREATMENTS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SCATTERING