Magnetoresistance of n-InSb and n-GaAs in weakly heating electric fields

The dependence of the nonlinearity coefficient β on the transverse magnetic field strength in n-InSb and n-GaAs at 77 K has been investigated. It was established that the change of β in magnetic field is strongly dependent on the impurity concentration. Theoretical analysis carried out in the electron temperature approximation has shown that the more pronounced dependence of β on magnetic field is observed when the intensities of lattice and ionised impurity scattering mechanisms are roughly equal