Published 1987
| Version v1
Book
Sheath physics and materials science results from recent plasma source ion implantation experiments
- 1. Dept. of Nuclear Engineering and Engineering Physics, Univ. of Wisconsin-Madison
Description
Plasma Source Ion Implantation (PSII) is a surface modification technique which has been optimized for ion-beam processing of materials. PSII departs radically from conventional implantation by circumventing the line of sight restriction inherent in conventional ion implantation. The authors used PSII to implant cutting tools and dies and have demonstrated substantial improvements in lifetime. Recent results on plasma physics scaling laws, microstructural, mechanical, and tribological properties of PSII-implanted materials are presented
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- The 1987 IEEE international conference on plasma science (Abstracts)
- Journal Page Range
- p. 124.
Conference
- Title
- IEEE international conference on plasma science.
- Dates
- 1-3 Jun 1987.
- Place
- Crystal City, VA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19047799
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CUTTING TOOLS; DIES; HARDENING; ION BEAMS; ION IMPLANTATION; MECHANICAL PROPERTIES; MICROSTRUCTURE; MODIFICATIONS; OPTIMIZATION; PLASMA; PLASMA FOCUS; PLASMA SHEATH; SCALING LAWS; SURFACE PROPERTIES; SURFACES; USES
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; EQUIPMENT; TOOLS