Published May 11, 1999 | Version v1
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Apparent Charge Transfer at Semiconductor Surfaces

Description

We investigate the apparent charge transfer between adatoms in the GeXPb[l.XjGe(lll) interface both experimentally and theoretically. Scanning tunneling microscopy and surface core level measurements suggest significant charge transfer from the Ge adatoms to the Pb adatoms. However, first-principles calculations unambiguously find that the total electronic displacement is negligibly small, and that the results of published experiments can be explained as a result of bond rearrangement

Availability note (English)

Available from INIS in electronic form; ALSO AVAILABLE FROM OSTI AS DE00007043; NTIS; US GOVT. PRINTING OFFICE DEP.

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Additional details

Publishing Information

Imprint Pagination
18 p.
Series
Physical Review B
Report number
SAND--99-1210J

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
30047116
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CHARGE TRANSPORT; INTERFACES; SEMICONDUCTOR MATERIALS
Descriptors DEC
MATERIALS

Optional Information

Contract/Grant/Project number
Contract AC04-94AL85000
Notes
Preprint
Funding organization
USDOE Office of Defense Programs (DP) (United States)