Published May 11, 1999
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Apparent Charge Transfer at Semiconductor Surfaces
Description
We investigate the apparent charge transfer between adatoms in the GeXPb[l.XjGe(lll) interface both experimentally and theoretically. Scanning tunneling microscopy and surface core level measurements suggest significant charge transfer from the Ge adatoms to the Pb adatoms. However, first-principles calculations unambiguously find that the total electronic displacement is negligibly small, and that the results of published experiments can be explained as a result of bond rearrangement
Availability note (English)
Available from INIS in electronic form; ALSO AVAILABLE FROM OSTI AS DE00007043; NTIS; US GOVT. PRINTING OFFICE DEP.
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Additional details
Publishing Information
- Imprint Pagination
- 18 p.
- Series
- Physical Review B
- Report number
- SAND--99-1210J
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30047116
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHARGE TRANSPORT; INTERFACES; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- MATERIALS
Optional Information
- Contract/Grant/Project number
- Contract AC04-94AL85000
- Notes
- Preprint
- Funding organization
- USDOE Office of Defense Programs (DP) (United States)