Characterization of materials using SIMS image depth profiling

The SIMS image depth profiling technique consists of sequentially recording ion images as a sample is sputtered. Once recorded, the imaged volume can be examined sequentially, as cross sectional ion images, or as a selected area depth profile. The use of a conductive metal coating and electron bombardment during sputtering compensate for sample charging, allowing relatively insulating ceramic materials to be examined by this technique. Lateral resolutions of ion images is typically 1 μm whereas the depth resolution can be as low as 5-10 nm. The authors demonstrate the use of this SIMS technique to characterize disordering of GaAs/A1As heterostructures, Ti diffusion in LiNbO3, and fiber-matrix interfaces in SiC-fiber reinforced SiC composites